声学超表面的非对称声分束特性研究

非对称声分束超表面是由人工微单元结构按照特定序列构建的二维平面结构,可将垂直入射的声波分成两束传播方向和分束比自由调控的透射波,在声功能器件设计及声通信领域具有广泛的应用前景。本文系统研究了一种实现非对称声分束的设计理论和实现方法,基于局域声功率守恒条件研究了声分束器的设计理论、阻抗矩阵分布、法向声强分布、声压场分布等。利用遗传算法对四串联共振腔结构进行参数优化实现了声分束器所需的阻抗矩阵分布,声压场分布表明声波入射到声分束器后在入射侧激发出两列传播方向相反且幅值和衰减系数均相同的表面波,实现了入射侧与透射侧的局域声功率相互匹配。声波经过声分束器后被分为两束透射波,两束透射波的折射角和透射系数与理论值十分吻合,证明了设计理论及实现方法的正确性和可行性。本文的研究工作可以为新型非对称声分束结构设计提供理论参考、设计方法和技术支持,并促进其在工程领域的实际应用。     

化学类拔尖学生培养与高校青年教师成长协同发展实践*

在高等教育大众化的背景下,通过教学改革培养高素质的拔尖人才已显得非常重要。介绍一种以新入职的青年教师为实施主体的“理论课助教+实验课教学+科研训练”相结合的教学形式。通过连续、跟踪式的教学,不但可以选拔、培养出拔尖的化学类本科生,而且能够促进新入职的青年教师快速成长进步,起到“教学相长”的作用。     

变刚度层叠梁的力学性能研究

为满足不同场景下的功能需求，变刚度结构得到越来越广泛的应用．以机器人手臂为例，在执行操作时，需要其手臂的结构刚度足够大，避免出现过大的扭曲和变形，而在与人交互时，又需要其结构足够柔软，以保证在此过程中与人交互的安全性．该类变刚度结构可根据需求通过外部激励在柔性和刚性状态之间自由切换．在该文章中，研究分析了层叠梁结构，通过理论推导和数值模拟，对其力学性能做出了很好的预测，同时为此类结构的研究提供了有效可靠的思路和方法．     

数学建模对高中生构建数学底层思维的作用及其教学实施建议

数学底层思维即用数学的眼光观察世界、用数学的思维分析世界以及用数学的语言表达世界,是人们面对自然和社会中纷繁多样的现象和问题时,所展现的自发的、不依赖监督的、融汇数学学科核心素养的思维方式.作为国家高中新课程标准中数学六大核心素养之一的数学建模,是培养学生数学底层思维的良好载体,对人才培养和社会发展均起到良好的促进作用.本文主要阐述了数学建模对高中生构建数学底层思维的作用,并结合教学实例给出教学实施建议.     

线上线下混合式实验教学模式的改革与探索

大学化学实验课程是培养材料、化学、化工等专业人才应用基本操作和理论解决实际问题的综合性实践训练环节。文章探讨了当前大学化学实验发展由于受到仪器设备大型化、专业化、成本大、更新快等因素限制出现瓶颈,设计了线上线下混合实验教学模式,进行相应的软硬件建设,并开展线上线下混合式实验教学模式的改革与探索。该教学模式具有良好的教学效果,并且可复制可推广,为创新人才的培养和实验教学的创新提供了有益的借鉴。     

Coupling characteristics of laterally coupled gratings with slots

Laterally-coupled ridge-waveguide distributed feedback lasers fabricated without epitaxial regrowth steps have the advantages of process simplification and low cost. We present a laterally coupled grating with slots. The slots etched between the ridge and grating area are designed to suppress the lateral diffusion of carriers and to reduce the influence of the aspect-ratio-dependent-etching effect on the grating morphology in the etching process. Moreover, the grating height in this structure can be decreased to lower the aspect ratio significantly, which is advantageous over the conventional laterally coupled ridge waveguide gratings. The effects of five main structural parameters on the coupling characteristics of gratings are studied by MODE Solutions. It is found that varying the lateral width of the grating can be used as an effective way to tune the coupling strength; narrow slots (100 nm and 300 nm) and wide ridge (2 μm-4 μm) promote the stability of grating coupling coefficient and device performance. It is important to note that the grating bottom should be fabricated precisely. The comparative study of carrier distribution and mode field distribution shows that the introduction of narrow slots can strengthen the competitive advantage and stability of the fundamental mode.     

Asymmetric nonlinear-mode-conversion in an optical waveguide withPT symmetry

Asymmetric mode transformation in waveguide is of great significance for on-chip integrated devices with one-way effect, while it is challenging to achieve asymmetric nonlinear-mode-conversion (NMC) due to the limitations imposed by phase-matching. In this work, we theoretically proposed a new scheme for realizing asymmetric NMC by combining frequency-doubling process and periodic PT symmetric modulation in an optical waveguide. By engineering the one-way momentum from PT symmetric modulation, we have demonstrated the unidirectional conversion from pump to second harmonic with desired guided modes. Our findings offer new opportunities for manipulating nonlinear optical fields with PT symmetry, which could further boost more exploration on on-chip nonlinear devices assisted by non-Hermitian optics.     

Relationship between the spatial position of the seed and growth mode for single-crystal diamond grown with an enclosed-type holder

The relationship between the spatial position of the diamond seed and growth mode is investigated with an enclosed-type holder for single-crystal diamond growth using the microwave plasma chemical vapor deposition epitaxial method. The results demonstrate that there are three main regions by varying the spatial position of the seed. Due to the plasma concentration occurring at the seed edge, a larger depth is beneficial to transfer the plasma to the holder surface and suppress the polycrystalline diamond rim around the seed edge. However, the plasma density at the edge decreases drastically when the depth is too large, resulting in the growth of a vicinal grain plane and the reduction of surface area. By adopting an appropriate spatial location, the size of single-crystal diamond can be increased from 7 mm × 7 mm × 0.35 mm to 8.6 mm × 8.6 mm × 2.8 mm without the polycrystalline diamond rim.     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.